STMICROELECTRONICS TIP120 Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFE Belkin F9D1000-15 Igt 150mA Peak Non Rep

Igt 150mA Peak Non Rep Surge Current Itsm 50Hz 5kA Current It av 150A Other details

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Material of Construction Black rubber Dimensions (L x W) 0

6) Cable Bundle Diameter Max 20mm Tensile Strength Pounds 18lb Product Range - Cable Tie Length 100mm Tensile Strength N/m² - Other details

STMICROELECTRONICS TIP120 Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFE Belkin F9D1000-15 Igt 150mA Peak Non RepThe TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO 220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage. Collector to emitter voltage (Vce) is 60V Collector current (Ic) is 5A Power dissipation (Pd) is 65W Collector to emitter saturation voltage