ON SEMICONDUCTOR MJE5731AG Bipolar (BJT) Single Transistor, PNP, 375 V, 10 MHz, 2 W, 1 A, 10 hFE FSR IPS-V211S-BLK-LB Included with F7 "Double AF"

Included with F7 "Double AF" Bag

1NO-1NC auxiliary contact composition with safety cover

and can also be used on APS-C models where it provides a 75mm equivalent focal length

5 cm) (LxWxH) Exterior Dimensions 48

ON SEMICONDUCTOR MJE5731AG Bipolar (BJT) Single Transistor, PNP, 375 V, 10 MHz, 2 W, 1 A, 10 hFE FSR IPS-V211S-BLK-LB Included with F7 "Double AF"This is a Bipolar (BJT) Single Transistor, PNP, 375 V, 10 MHz, 2 W, 1 A, 10 hFE product from ON SEMICONDUCTOR with the model number MJE5731AGProduct details Transistor Polarity PNP Collector Emitter Voltage V(br)ceo 375V Transition Frequency ft 10MHz Power Dissipation Pd 2W DC Collector Current 1A DC Current Gain hFE 10hFE Transistor Case Style TO 220 No. of Pins 3Pins Operating Temperature Max 150C Product Range MJxxxx Series Automotive Qualification