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ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFE Neutrik NBB75FA You can select the output

SKU 99985970142
4.4
USD539.18 USD567.18

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Ships within 48 hours · Estimated delivery Aug 9 - Aug 14

Description

You can select the output format for each channel via the UOC setup menu

Premium 24k Gold Plated Connectors

application area is in the construction of a straight multi-channel playback chain

Approvals UL Zero Power Resistance at 25°C 5ohm Product Range B57235S0 Series Disc Size 9

ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFE Neutrik NBB75FA You can select the outputThe MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built in base emitter shunt resistor. High DC current gain Collector base voltage (Vcbo = 120V) Emitter base voltage (Vcbo = 5V) Applications Industrial Product details Power Dissipation Pd 200W DC Collector Current 30A Collector Emitter

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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